The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Sep. 18, 2002
Applicants:
Siyi LI, Fremont, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Sean S. Kang, Fremont, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
The invention relates to the etching of a dielectric layer in an integrated circuit (IC) structure having a patterned metal hard mask layer. The method comprises feeding a gas mixture that includes a carbon monoxide (CO) and at least one fluorocarbon gas mixture into a reactor. The gas mixture has no oxygen (O) gas. The gas mixture is then converted into a plasma. The plasma selectively etches the dielectric layer. Typically, the dielectric layer comprises silicon.