The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Oct. 07, 2003
Roger Leung, San Jose, CA (US);
Denis Endisch, Cupertino, CA (US);
Songyuan Xie, Newark, CA (US);
Nigel Hacker, Palo Alto, CA (US);
Yanpei Deng, Fremont, CA (US);
Roger Leung, San Jose, CA (US);
Denis Endisch, Cupertino, CA (US);
Songyuan Xie, Newark, CA (US);
Nigel Hacker, Palo Alto, CA (US);
Yanpei Deng, Fremont, CA (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.