The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Aug. 28, 2003
Kiwamu Fujimoto, Nirasaki, JP;
Nobuhiro Wada, Nirasaki, JP;
Kiwamu Fujimoto, Nirasaki, JP;
Nobuhiro Wada, Nirasaki, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF/Ar/Nmixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply sourcewith the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vesselare whirled by the purging gas to be discharged through an exhaust portand through an exhaust pipeWhen the purging step is completed, the second step plasma etching is performed with CF/Ar/Nmixed gas.