The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Nov. 07, 2001
Matthew A. Purdy, Austin, TX (US);
Joyce S. Oey Hewett, Austin, TX (US);
Matthew A. Purdy, Austin, TX (US);
Joyce S. Oey Hewett, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method comprised of forming a process layer above a wafer, forming an ARC layer above the process layer, determining at least one optical characteristic of the ARC layer, and determining, based upon the determined optical characteristic of the ARC layer, at least one parameter of a stepper exposure process. The present invention is also directed to a system that may be used to perform the methods described herein. In one embodiment, the system is comprised of an optical metrology tool for measuring at least one optical characteristic of an ARC layer formed above a process layer, a controller for determining, based upon data obtained from the optical metrology tool, at least one parameter of a stepper exposure process, and a stepper tool for performing the exposure process comprised of the determined at least one parameter.