The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Oct. 23, 2002
Hideaki Yamasaki, Kofu, JP;
Yumiko Kawano, Kofu, JP;
Kenichi Kubo, Kofu, JP;
Susumu Arima, Yamanashi-Ken, JP;
Hideaki Yamasaki, Kofu, JP;
Yumiko Kawano, Kofu, JP;
Kenichi Kubo, Kofu, JP;
Susumu Arima, Yamanashi-Ken, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel () for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit () for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (), and an evacuating system () for evacuating the processing vessel (). The evacuating system () includes a vacuum pump (), a high-temperature trapping device () disposed above the vacuum pump () with respect to the flowing direction of a gas, and a low-temperature trapping device () disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device () decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel () to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)produced as a reaction byproduct.