The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Apr. 17, 2003
Applicants:
Yih-chen Su, Taichung, TW;
Chao-tzung Tsai, Hsin-Chu, TW;
Inventors:
Yih-Chen Su, Taichung, TW;
Chao-Tzung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method for reducing the dimension of a patterned organic photoresist area by reducing the pressure of a reactive environment surrounding the patterned photoresist to cause outgasing. The outgased materials CHOare then decomposed in the reactive environment leaving the outgased photoresist porous. The environment surrounding the patterned photoresist is then increased to atmospheric pressure, which compresses or shrinks the porous photoresist. Photoresist lines having a dimension as small as about 0.085 μm can be obtained.