The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Dec. 31, 2002
Andrew J. Walker, Mountain View, CA (US);
S. Brad Herner, San Jose, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
En-hsing Chen, Sunnyvale, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Sucheta Nallamothu, San Jose, CA (US);
Mark Clark, Leuven, BE;
Andrew J. Walker, Mountain View, CA (US);
S. Brad Herner, San Jose, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
En-Hsing Chen, Sunnyvale, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Sucheta Nallamothu, San Jose, CA (US);
Mark Clark, Leuven, BE;
Matrix Semiconductor, Inc., Santa Clara, CA (US);
Abstract
A thin film transistor with a channel less than 100 angstroms thick, preferably less than 80 angstroms thick, preferably less than 60 angstroms thick. The very thin channel reduces variability of threshold voltage from one TFT to the next. This is particularly advantageous for TFT memory arrays. It is possible that an extremely thin channel restricts the size of grains, forcing many small grains to be formed.