The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Feb. 12, 2002
Jiann-tyng Tzeng, Yi-Lan, TW;
Yuh-hwa Chang, Taipei Hsieh, TW;
Jiun-nan Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method is provided for monitoring the effect of electron charging during the creation of a semiconductor device. The method of the invention makes use of electron trapping that occurs as a result of FN tunneling in a layer of interlayer oxide of an EEPROM device. The electron trapping is monitored under conditions of processing. After the electron trapping has occurred, the rate of discharge of the trapped electron charge is measured during Wafer Acceptance Testing (WAT).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile