The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Nov. 07, 2002
Eiji Oue, Ome, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Masao Kondo, Higashimurayama, JP;
Hiromi Shimamoto, Iruma, JP;
Eiji Oue, Ome, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Masao Kondo, Higashimurayama, JP;
Hiromi Shimamoto, Iruma, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi Device Engineering Co., Ltd., Mobara, JP;
Abstract
A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a pextrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.