The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Dec. 23, 2002
Akira Kumagai, Tokyo, JP;
Keiji Ishibashi, Tokyo, JP;
Shigeru Mori, Tokyo, JP;
Anelva Corporation, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiOfilm) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (Ngas, NO gas, NO gas, NOgas or the like) is added to oxygen atom containing gas (Ogas, Ogas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile