The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Jun. 10, 2003
Applicants:
Hiroshi Shinriki, Nirasaki, JP;
Kazumi Kubo, Nirasaki, JP;
Inventors:
Hiroshi Shinriki, Nirasaki, JP;
Kazumi Kubo, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.