The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Nov. 09, 2001
Applicants:
Stephen P. Deornellas, Santa Rosa, CA (US);
Leslie G. Jerde, Novato, CA (US);
Alferd Cofer, Petaluma, CA (US);
Inventors:
Stephen P. DeOrnellas, Santa Rosa, CA (US);
Leslie G. Jerde, Novato, CA (US);
Alferd Cofer, Petaluma, CA (US);
Assignee:
Silicon Valley Bank, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ; H01L021/3065 ;
U.S. Cl.
CPC ...
Abstract
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.