The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Jan. 12, 2004
Applicants:
Bruno M. Lafontaine, Pleasanton, CA (US);
Ivan Lavolic, Mountain View, CA (US);
Inventors:
Bruno M. LaFontaine, Pleasanton, CA (US);
Ivan Lavolic, Mountain View, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B027/62 ; G03B027/58 ;
U.S. Cl.
CPC ...
Abstract
Disclosed are a method of and a system for monitoring extreme ultraviolet (EUV) lithography mask flatness. An EUV mask, which is chucked to a chuck, can be scanned with a capacitance probe that generates elevation data for the EUV mask. From the elevation data, a first flatness profile can be generated. In one embodiment, the EUV mask can be rotated and rescanned.
LaFontaine, Bruno. (2005). Method and system for monitoring euv lithography mask flatness (U.S. Patent No. 6950176). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6950176
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile