The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Oct. 29, 2003
Tamotsu Owada, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Kengo Inoue, Kawasaki, JP;
Atsuo Shimizu, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Kengo Inoue, Kawasaki, JP;
Atsuo Shimizu, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.