The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Jul. 31, 2003
Applicants:
Ching-chen Hao, Hsin-Chu, TW;
Hung-jen Lin, Tainan, TW;
Min-hwa Chi, Hsin-chu, TW;
Chih-heng Shen, Hsin-Chu, TW;
Inventors:
Ching-Chen Hao, Hsin-Chu, TW;
Hung-Jen Lin, Tainan, TW;
Min-Hwa Chi, Hsin-chu, TW;
Chih-Heng Shen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/31 ;
U.S. Cl.
CPC ...
Abstract
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed.