The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Feb. 09, 2004
Panayotis Constantinou Andricacos, Croton-on-Hudson, NY (US);
Harikilia Deligianni, Tenafly, NJ (US);
John Owen Dukovic, Pleasantville, NY (US);
Daniel C. Edelstein, New Rochelle, NY (US);
Wilma Jean Horkans, Ossining, NY (US);
Chao-kun HU, Somers, NY (US);
Jeffrey Louis Hurd, Marlboro, NY (US);
Kenneth P. Rodbell, Sandy Hook, NY (US);
Cyprian Emeka Uzoh, Hopewell Junction, NY (US);
Kwong-hon Wong, Wappingers Falls, NY (US);
Panayotis Constantinou Andricacos, Croton-on-Hudson, NY (US);
Harikilia Deligianni, Tenafly, NJ (US);
John Owen Dukovic, Pleasantville, NY (US);
Daniel C. Edelstein, New Rochelle, NY (US);
Wilma Jean Horkans, Ossining, NY (US);
Chao-Kun Hu, Somers, NY (US);
Jeffrey Louis Hurd, Marlboro, NY (US);
Kenneth P. Rodbell, Sandy Hook, NY (US);
Cyprian Emeka Uzoh, Hopewell Junction, NY (US);
Kwong-Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.