The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Feb. 11, 2003
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
Method of etching a ferroelectric layer includes etching an upper electrode and partially through a ferroelectric layer. A dielectric material is subsequently deposited upon the upper electrode and the partially etched ferroelectric layer. A second etch step completely etches through the remaining portion of the ferroelectric layer and also etches lower electrodes. A random access memory apparatus is constructed that includes a first conductive layer, a dielectric layer disposed upon the first conductive layer, a second conductive layer disposed upon the dielectric layer, where such layers form a stack having a sidewall. Further, the sidewall has a protective dielectric film disposed thereon and extending from the second layer down to the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile