The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Sep. 30, 2002
Shoji Hotta, Ome, JP;
Norio Hasegawa, Hinode, JP;
Toshihiko Tanaka, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of fabrication of a semiconductor integrated circuit device uses a mark having, on a first main surface of a mask substrate, a first light transmitting region, a second light transmitting region disposed at the periphery of the first light transmitting region and permitting inversion of the phase of light transmitted through the second light transmitting region relative to light transmitted through the first light transmitting region, and a light shielding region disposed at the periphery of the second light transmitting region. The second light transmitting region is formed from a first film deposited over the first main surface of the mask substrate, said light shielding region is formed by a second film deposited over the first main surface of the mask substrate via said first film, and at least one of said first film and second is formed from a resist film.