The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2005

Filed:

Aug. 19, 2002
Applicants:

Purakh Raj Verma, Singapore, SG;

Shao-fu Sanford Chu, Singapore, SG;

Inventors:

Purakh Raj Verma, Singapore, SG;

Shao-fu Sanford Chu, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8222 ;
U.S. Cl.
CPC ...
Abstract

A bipolar transistor, and manufacturing method therefor, with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric layer is deposited over the substrate and connections are formed to the extrinsic base structure, the emitter structure and the collector region.


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Verma, Purakh. (2005). Double polysilicon bipolar transistor and method of manufacture therefor (U.S. Patent No. 6936519). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6936519

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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