The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Jul. 16, 2002
Yong-shun Liao, Shanhua Jen, TW;
Juing-yi Wu, Chang Hua, TW;
Dian-hau Chen, Hsinchu, TW;
Zhen-cheng Chou, Taichung, TW;
Yong-Shun Liao, Shanhua Jen, TW;
Juing-Yi Wu, Chang Hua, TW;
Dian-Hau Chen, Hsinchu, TW;
Zhen-Cheng Chou, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for fabricating a microelectronic fabrication there is employed a patterned positive photoresist residue layer as a protective layer within an aperture when processing an upper region of a topographic microelectronic layer having formed therein the aperture. The patterned positive photoresist residue layer is formed employing an incomplete vertical, but complete horizontal, blanket photoexposure and development of a blanket positive photoresist layer formed upon the topographic microelectronic layer and filling the aperture. The method provides the microelectronic fabrication with enhanced reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile