The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jan. 13, 2003
Applicants:
Chentsau Ying, Cupertino, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Chun Yan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Inventors:
Chentsau Ying, Cupertino, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Chun Yan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.