The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Oct. 31, 2002
Kevin R. Lensing, Austin, TX (US);
James Broc Stirton, Austin, TX (US);
Homi E. Nariman, Austin, TX (US);
Steven P. Reeves, Austin, TX (US);
Kevin R. Lensing, Austin, TX (US);
James Broc Stirton, Austin, TX (US);
Homi E. Nariman, Austin, TX (US);
Steven P. Reeves, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.