The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Dec. 10, 2003
Applicants:
Jon C. Lee, Hsin-Chu, TW;
Jung-hsiang Chuang, Hsin-Chu, TW;
Inventors:
Jon C. Lee, Hsin-Chu, TW;
Jung-Hsiang Chuang, Hsin-Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R031/02 ;
U.S. Cl.
CPC ...
Abstract
A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.
Lee, Jon. (2005). Method using conductive atomic force microscopy to measure contact leakage current (U.S. Patent No. 6930502). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6930502
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile