The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Oct. 22, 2003
Chuan-ping Hou, Tainan, TW;
Syun-ming Jang, Hsin-Chu, TW;
Ying-ho Chen, Taipei, TW;
Tung-ching Tseng, Taipei, TW;
Chuan-Ping Hou, Tainan, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Ying-Ho Chen, Taipei, TW;
Tung-Ching Tseng, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
In a method of the present invention, an intermediate structure having a top surface is provided. An isolation trench is formed is the intermediate structure. Isolation material is deposited over the intermediate structure. The isolation material fills the isolation trench. Excess isolation material extends above the top surface of the intermediate structure. Part of the excess isolation material is removed until there is a predetermined thickness of isolation material remaining on the top surface of the intermediate structure. A contact opening is formed in the isolation material at the isolation trench. The contact opening extends through at least part of the intermediate structure. Contact material is deposited over the isolation material. The contact material fills the contact opening. Excess contact material, if any, that extends above the isolation material is removed. The excess isolation material is removed at least until the top surface of the intermediate structure is reached.