The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
May. 11, 2001
Mamoru Okada, Nagano, JP;
Yukio Nakajima, Nagano, JP;
Mamoru Okada, Nagano, JP;
Yukio Nakajima, Nagano, JP;
Shin-Etsu Handotai Co, Ltd., Tokyo, JP;
Abstract
In a method for thinning a semiconductor wafer by grinding a back surface of the semiconductor wafer in which semiconductor devicesare formed on its surface, the surface of the semiconductor waferis adhered to a supportvia an adhesive layer, the back surface of the semiconductor wafer is ground while holding the support, and then the thinned semiconductor wafer is released from the support. Preferably, a semiconductor wafer is used as the support, a thermal release double-sided adhesive sheet is used as the adhesive layer, and they are separated by heating after grinding. Thus, there are provided a method for thinning a semiconductor wafer, which enables production of semiconductor wafers having a thickness of about 120 μm or less without generating breakage such as cracking or chipping during the processing step and so forth as much as possible at a low cost, and a semiconductor wafer thinned further compared with conventional products in spite of a large diameter of 6 inches (150 mm) or more.