The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Jun. 17, 2003
Applicants:
Justin K. Brask, Portland, OR (US);
Mohamed A. Shaheen, Portland, OR (US);
Ruitao Zhang, Portland, OR (US);
Inventors:
Justin K. Brask, Portland, OR (US);
Mohamed A. Shaheen, Portland, OR (US);
Ruitao Zhang, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/306 ;
U.S. Cl.
CPC ...
Abstract
The present invention discloses a method including: providing a silicon wafer; forming a buried oxide (BOX) in the silicon wafer below a silicon body; and reducing a thickness of the silicon body by chemical thinning.
Brask, Justin. (2005). Chemical thinning of epitaxial silicon layer over buried oxide (U.S. Patent No. 6927146). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6927146
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile