The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Feb. 02, 2004
Jean Y. Yang, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Emmanuil H. Lingunis, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Emmanuil H. Lingunis, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The invention is a semiconductor device and a method of forming the semiconductor device. The semiconductor device comprises a substrate; buried bitlines formed in the substrate narrower than achievable at a resolution limit of lithography; a doped region formed adjacent at least one of the buried bitlines; a charge trapping layer disposed over the substrate; and a conductive layer disposed over the charge trapping layer, wherein the doped region adjacent the least one of the buried bitlines inhibits a leakage current between the buried bitlines.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile