The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Dec. 27, 2001
Takashi Hattori, Musashimurayama, JP;
Yasuko Gotoh, Mobara, JP;
Hidetoshi Satoh, Hitachinaka, JP;
Toshihiko Tanaka, Tokyo, JP;
Hiroshi Shiraishi, Hachioji, JP;
Takashi Hattori, Musashimurayama, JP;
Yasuko Gotoh, Mobara, JP;
Hidetoshi Satoh, Hitachinaka, JP;
Toshihiko Tanaka, Tokyo, JP;
Hiroshi Shiraishi, Hachioji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.