The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Jun. 05, 2003
Tzu-jen Chou, Hsinchu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Ying-ho Chen, Taipei, TW;
Shen-nan Lee, Hsinchu, TW;
Tzu-Jen Chou, Hsinchu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Ying-Ho Chen, Taipei, TW;
Shen-Nan Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile