The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Feb. 13, 2003
Chien-chao Huang, Hsin-chu, TW;
Chao-hsiung Wang, Hsinchu, TW;
Chung-hu GE, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chen Ming HU, Hsinchu, TW;
Chien-Chao Huang, Hsin-chu, TW;
Chao-Hsiung Wang, Hsinchu, TW;
Chung-Hu Ge, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Chen Ming Hu, Hsinchu, TW;
Taiwan SEmiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A strained silicon layer fabrication and a method for fabrication thereof employ a strained insulator material layer formed over a strained silicon layer in turn formed upon a strained silicon-germanium alloy material layer which is formed upon a relaxed material substrate. The strained insulator material layer provides increased fabrication options which provide for enhanced fabrication efficiency when fabricating the strained silicon layer fabrication.