The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2005
Filed:
Apr. 23, 2002
Yung-hee Yvette Lee, San Jose, CA (US);
Shashank Deshmukh, San Jose, CA (US);
Yung-Hee Yvette Lee, San Jose, CA (US);
Shashank Deshmukh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cland O) and four gas (e.g., HBr, Cl, Oand CF) chemistries to perform gate etching in plasma process chambers. However, the silicon to resist selectivity achieved by these chemistries is limited to about 3:1. The present invention concerns a plasma source gas comprising SFand one or more fluorine-containing gases selected from CF, CF, CF, CHF, CHF, and CF(e.g., SFand CF), allowing the use of a two gas etch chemistry that provides enhanced silicon to photoresist selectivity in gate etching processes.