The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Mar. 16, 2004
Theodore Zhu, Mission Viejo, CA (US);
Yong LU, Rosemount, MN (US);
Anthony Arrott, Washington, DC (US);
Theodore Zhu, Mission Viejo, CA (US);
Yong Lu, Rosemount, MN (US);
Anthony Arrott, Washington, DC (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A magneto-resistive memory comprises magneto-resistive memory cells comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.