The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jul. 19, 2002
Sean S. Kang, Fremont, CA (US);
SI Yi LI, Milpitas, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A system and method for achieving a silicon carbide to low-k dielectric etch selectivity ratio of greater than 1:1 using a chlorine containing gas and either hydrogen (H) gas or nitrogen (N) gas is described. The method is applied to a semiconductor substrate having a low-k dielectric layer and a silicon carbide layer. The chlorine containing gas is a gas mixture that includes either HCl, BCl, Cl, or any combination thereof. In one embodiment, the method provides for supplying an etchant gas comprising a chlorine containing gas and a hydrogen (H) gas. The etchant gas is then energized to generate a plasma which then etches openings in the silicon carbide at a faster etch rate than the low-k dielectric etch rate. In an alternative embodiment, the etchant gas mixture comprises a chlorine containing gas and a nitrogen (N) gas.