The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Jul. 30, 2003
Albert Birner, Dresden, DE;
Matthias Goldbach, Dresden, DE;
Thomas Hecht, Dresden, DE;
Lars Heineck, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Jörn Lützen, Dresden, DE;
Dirk Manger, Dresden, DE;
Andreas Orth, Dresden, DE;
Albert Birner, Dresden, DE;
Matthias Goldbach, Dresden, DE;
Thomas Hecht, Dresden, DE;
Lars Heineck, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Jörn Lützen, Dresden, DE;
Dirk Manger, Dresden, DE;
Andreas Orth, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of the trench as far as a boundary surface defines a collar region. In a second thermal process having a second maximum temperature that is not significantly higher than the first maximum temperature, a liner is deposited on the collar region and the boundary surface. The liner is removed from the boundary surface, thereby exposing the filler. The filler is then removed from a lower region of the trench.