The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2005

Filed:

Dec. 19, 2002
Applicants:

Vedapuram S. Achutharaman, San Jose, CA (US);

Juan Chacin, Palo Alto, CA (US);

Hali Forstner, Belmont, CA (US);

Inventors:

Vedapuram S. Achutharaman, San Jose, CA (US);

Juan Chacin, Palo Alto, CA (US);

Hali Forstner, Belmont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/311 ;
U.S. Cl.
CPC ...
Abstract

A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.


Find Patent Forward Citations

Achutharaman, Vedapuram. (2005). Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile (U.S. Patent No. 6916744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6916744

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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