The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jun. 24, 2003
Ki-tae Park, Beacon, NY (US);
Shimeno Koji, Beacon, NY (US);
Tomoko Ogura, Hopewell Jct., NY (US);
Halo LSI, Inc., Hillsboro, OR (US);
Abstract
An improved charge pump circuit is provided using a triple-well structure where the charge pump circuit has a plurality of stages containing N-channel MOSFET devices in which each stage is contained in a P-well within a Deep N-well residing on a P-substrate. Each pump stage is formed in its own P-well and the pumping stages are serially connected from power supply source to the output terminal. Each pumping stage includes a charge transfer device, a first auxiliary device to precharge the gate of the charge transfer device with a voltage from the previous stage, and a second auxiliary device to switch coupling between the charge transfer device and its substrate region to reduce the body effect and increases the capacitive boosting effect. The multiple stages of circuitry are clocked from either a four-phase clock or a two-phase clock.