The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jan. 02, 2002
Ebrahim Andideh, Portland, OR (US);
Qing MA, San Jose, CA (US);
Quan Tran, San Jose, CA (US);
Steve Towle, Sunnyvale, CA (US);
Ebrahim Andideh, Portland, OR (US);
Qing Ma, San Jose, CA (US);
Quan Tran, San Jose, CA (US);
Steve Towle, Sunnyvale, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.