The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jan. 13, 2003
Lihua LI, San Jose, CA (US);
Tzu-fang Huang, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Juan Carlos Rocha-alvarez, Sunnyvale, CA (US);
Maosheng Zhao, Santa Clara, CA (US);
Lihua Li, San Jose, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Juan Carlos Rocha-Alvarez, Sunnyvale, CA (US);
Maosheng Zhao, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.