The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
May. 13, 2003
Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon
Robert J. Falster, London, GB;
Harold W. Korb, Town & Country, MO (US);
Robert J. Falster, London, GB;
Harold W. Korb, Town & Country, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for producing silicon which is substantially free of agglomerated intrinsic point defects in an ingot having a vacancy dominated region. An ingot is grown generally in accordance with the Czochralski method. While intrinsic point defects diffuse from or are annihilated within the ingot, at least a portion of the ingot is maintained above a temperature Tat which intrinsic point defects agglomerate. The achievement of defect free silicon is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.