The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jan. 16, 2003
Isao Kidoguchi, Hyogo, JP;
Akihiko Ishibashi, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Gaku Sugahara, Nara, JP;
Masakatsu Suzuki, Osaka, JP;
Masahiro Kume, Shiga, JP;
Yuzaburo Ban, Osaka, JP;
Kiyoyuki Morita, Kyoto, JP;
Ayumu Tsujimura, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Akihiko Ishibashi, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Gaku Sugahara, Nara, JP;
Masakatsu Suzuki, Osaka, JP;
Masahiro Kume, Shiga, JP;
Yuzaburo Ban, Osaka, JP;
Kiyoyuki Morita, Kyoto, JP;
Ayumu Tsujimura, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AlGaInN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlGaInN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.