The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Sep. 17, 2002
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Peijun Ding, Saratoga, CA (US);
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Peijun Ding, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick Taseed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Taseed layer. Further, the Taseed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the Taseed layer. In another embodiment of the method, a Ta film is altered on its surface to form the Taseed layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile