The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Feb. 16, 2001
Jay E. Uglow, Livermore, CA (US);
Nicolas J. Bright, San Jose, CA (US);
Dave J. Hemker, San Jose, CA (US);
Kenneth P. Macwilliams, Monte Sereno, CA (US);
Jeffrey C. Benzing, Saratoga, CA (US);
Timothy M. Archer, Portland, OR (US);
Jay E. Uglow, Livermore, CA (US);
Nicolas J. Bright, San Jose, CA (US);
Dave J. Hemker, San Jose, CA (US);
Kenneth P. MacWilliams, Monte Sereno, CA (US);
Jeffrey C. Benzing, Saratoga, CA (US);
Timothy M. Archer, Portland, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.