The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
May. 05, 2003
Ingo Aller, Weil im Schoenbuch, DE;
Joachim Keinert, Altdorf, DE;
Thomas Ludwig, Sindelfingen, DE;
Edward J. Nowak, Essex Junction, VT (US);
Bethann Rainey, South Burlington, VT (US);
Ingo Aller, Weil im Schoenbuch, DE;
Joachim Keinert, Altdorf, DE;
Thomas Ludwig, Sindelfingen, DE;
Edward J. Nowak, Essex Junction, VT (US);
BethAnn Rainey, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.