The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Jan. 16, 2002
Wolfgang Rösner, Ottobrunn, DE;
Thomas Schulz, München, DE;
Lothar Risch, Neubiberg, DE;
Thomas Äugle, München, DE;
Herbert Schäfer, Höhenkirchen, DE;
Martin Franosch, München, DE;
Wolfgang Rösner, Ottobrunn, DE;
Thomas Schulz, München, DE;
Lothar Risch, Neubiberg, DE;
Thomas Äugle, München, DE;
Herbert Schäfer, Höhenkirchen, DE;
Martin Franosch, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A vertical semiconductor transistor component is built up on a substrate by using a statistical mask. The vertical semiconductor transistor component has vertical pillar structures statistically distributed over the substrate. The vertical pillar structures are electrically connected on a base side thereof to a first common electrical contact. The vertical pillar structures include, along the vertical direction, layer zones of differing conductivity, and have insulation layers on their circumferential walls. An electrically conductive material is deposited between the pillar structures and forms a second electrical contact of the semiconductor transistor component. The pillar structures are electrically contacted to a third common electrical contact on their capping side.