The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Dec. 30, 2002
Cyrus Tabery, Sunnyvale, CA (US);
Chih-yuh Yang, San Jose, CA (US);
William G. En, Milpitas, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Ming-ren Lin, Cupertino, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Chih-Yuh Yang, San Jose, CA (US);
William G. En, Milpitas, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Ming-Ren Lin, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and (B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile