The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Oct. 03, 2002
Hsin-tang Peng, Hsinchu Hsien, TW;
Yung-ching Wang, Kaohsiung Hsien, TW;
Teng-chun Yang, Chia-Yi Hsien, TW;
Hsin-Tang Peng, Hsinchu Hsien, TW;
Yung-Ching Wang, Kaohsiung Hsien, TW;
Teng-Chun Yang, Chia-Yi Hsien, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Abstract
A method of forming contact holes. A dielectric liner is comformally formed on a substrate, parts of the dielectric liner between the second and the third conducting structure are removed, a conductive liner is conformally formed on the substrate, and parts of the metal layer are removed to leave parts thereof between the second and the third conducting structure. An ILD layer is then formed on the entire surface of the substrate, and a patterned photoresist layer is formed on the ILD layer. Finally, the ILD layer is etched using the patterned photoresist layer as a mask to form a first contact hole, a second contact hole, and a third contact hole in the ILD layer at the same time.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile