The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Apr. 10, 2002
Kristian E. Johnsgard, Los Gatos, CA (US);
David E. Sallows, Union City, CA (US);
Daniel L. Messineo, San Jose, CA (US);
Robert D. Mailho, Sonora, CA (US);
Mark W. Johnsgard, Campbell, CA (US);
Kristian E. Johnsgard, Los Gatos, CA (US);
David E. Sallows, Union City, CA (US);
Daniel L. Messineo, San Jose, CA (US);
Robert D. Mailho, Sonora, CA (US);
Mark W. Johnsgard, Campbell, CA (US);
Mattson Technology, Inc., Freemont, CA (US);
Abstract
Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.