The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Mar. 15, 2004
Masashi Suzuki, Komoro, JP;
Hitoshi Akamine, Maebashi, JP;
Tetsuaki Adachi, Tobu, JP;
Takahiro Sato, Tamamura, JP;
Masashi Maruyama, Komoro, JP;
Susumu Takada, Saku, JP;
Masashi Suzuki, Komoro, JP;
Hitoshi Akamine, Maebashi, JP;
Tetsuaki Adachi, Tobu, JP;
Takahiro Sato, Tamamura, JP;
Masashi Maruyama, Komoro, JP;
Susumu Takada, Saku, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile