The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Apr. 04, 2002
Ho-yuan Yu, Saratoga, CA (US);
Eric Johnson, Santa Clara, CA (US);
Ho-Yuan Yu, Saratoga, CA (US);
Eric Johnson, Santa Clara, CA (US);
LovolTech, Inc., Santa Clara, CA (US);
Abstract
A method for fabricating a junction field transistor for high-voltage applications. A lightly doped first epitaxial layer is formed on a highly doped substrate. A second epitaxial layer is deposited with a heavier dopant concentration than the first epitaxial layer. The second layer contains a control structure having a plurality of implanted gate regions and a source. A guard ring is formed to isolate the source and the control structure. The combination of the lightly doped first epitaxial layer and the guard ring enable the JFET to be operated with a breakdown voltage in excess of 100 volts. Multiple guard rings may be used to provide a breakdown voltage in excess of 150 volts.