The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Sep. 18, 2002
Jeffrey D. Chinn, Foster City, CA (US);
Michael B. Rattner, Santa Clara, CA (US);
James A. Cooper, San Jose, CA (US);
Rolf A. Guenther, Monte Sereno, CA (US);
Jeffrey D. Chinn, Foster City, CA (US);
Michael B. Rattner, Santa Clara, CA (US);
James A. Cooper, San Jose, CA (US);
Rolf A. Guenther, Monte Sereno, CA (US);
Applied Materials, INC, Santa Clara, CA (US);
Abstract
Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.